By Topic

Applicability of Macroscopic Transport Models to Decananometer MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Martin Vasicek ; Wolfgang Pauli Institute, University of Vienna, Vienna, Austria ; Johann Cervenka ; David Esseni ; Pierpaolo Palestri
more authors

We perform a comparative study of various macroscopic transport models against multisubband Monte Carlo (MC) device simulations for decananometer MOSFETs in an ultra-thin body double-gate realization. The transport parameters of the macroscopic models are taken from homogeneous subband MC simulations, thereby implicitly taking surface roughness and quantization effects into account. Our results demonstrate that the drift-diffusion (DD) model predicts accurate drain currents down to channel lengths of about 40 nm but fails to predict the transit frequency below 80 nm. The energy-transport (ET) model, on the other hand, gives good drain currents and transit frequencies down to 80 nm, whereas below 80 nm, the error rapidly increases. The six moments model follows the results of MC simulations down to 30 nm and outperforms the DD and the ET models.

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 3 )