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Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers

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5 Author(s)
Jeon, Joon-Woo ; Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea ; Yum, Woong-Sun ; Seong, Tae-Yeon ; Sang Youl Lee
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The authors report on the formation of highly reliable Ti/Al-based ohmic contacts to N-face n-GaN for high-performance vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers. The Ti(Ga) solid solution layer is used to minimize the outdiffusion of Ga atoms from the n-GaN surface region. Unlike the Ti/Al contacts, the Ti(Ga)/Ti/Al and Ti(Ga)/TiN/Al samples exhibit ohmic behavior with contact resistivities of 3.9 – 4.8 × 10-4 Ωcm2 after annealing at 250 °C. It was further shown that unlike the Ti(Ga)/TiN/Al samples, the Ti/Al and the Ti(Ga)/Ti/Al samples are largely electrically degraded when annealed at 300 °C in an oven. Based on x-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 2 )