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We investigated the degradation of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) for various channel widths under high-gate and drain bias stress. The threshold voltage of IGZO TFT with wide-channel width (W > 100 μm) was significantly shifted. This included stress-induced hump-effect in a negative direction after the stress, whereas IGZO TFT with narrow-channel width (W < 100 μm) shifted in a positive direction. This phenomenon may be attributed to the hole trapping into the back-interface region. In order to enhance the reliability of IGZO TFTs, we developed and verified that the multiple-channel device showed better bias-temperature stability (ΔV
Published in:
Applied Physics Letters
(Volume:100
,
Issue:
4
)
Date of Publication: Jan 2012
- Page(s):
- 043503 - 043503-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3679109
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 January 2012
- Issue Date :
- Jan 2012
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