Scheduled System Maintenance:
On May 6th, system maintenance will take place from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). During this time, there may be intermittent impact on performance. We apologize for the inconvenience.
By Topic

A 21 V output charge pump circuit with appropriate well-bias supply technique in 0.18 μm Si CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Shirane, A. ; Solutions Res. Lab. (SSRL), Tokyo Inst. of Technol., Yokohama, Japan ; Ito, H. ; Ishihara, N. ; Masu, K.

Most of MEMS (Micro Electro Mechanical Systems) actuators require high control voltage such as 20 V. One of the significant challenges for MEMS implementation on Si CMOS is that the control voltage exceeds pn-junction breakdown voltage. The present work proposes a charge pump circuit that can generate higher output voltage than the breakdown voltage by applying appropriate bias voltages to backgate and deep-N-well of N-MOSFETs. Measurements showed that the prototype can generate DC voltage of 21V in 0.18 μm Si CMOS with 11V and 15 V breakdown voltage of pn-junction.

Published in:

SoC Design Conference (ISOCC), 2011 International

Date of Conference:

17-18 Nov. 2011