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This paper presents a high performance wideband amplifier and justifies the performance with the aid of measurement results. The amplifier consumes very low power about 6.8mW from a supply voltage of 1.8V. The amplifier is designed using a cross coupled cascode topology to improve the Gain and Bandwidth. The design is implemented in a 0.18μm SiGe BiCMOS process (ft = 200GHz) with 9.3dB small signal differential Gain and a flat 3dB Bandwidth from DC to 14GHz. The design size of the core amplifier is 230μm × 80μm.