Cart (Loading....) | Create Account
Close category search window
 

Analysis of time dependent dielectric breakdown in nanoscale CMOS circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ho Joon Lee ; Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA ; Kyung Ki Kim

As CMOS technology is scaled down more aggressively; the reliability mechanism (or aging effect) caused by progressive gate oxide breakdown, also called time dependent dielectric breakdown (TDDB), has become a major reliability concern. With the present of TDDB, it is difficult to control the ON current of the MOSFET device. In addition, nanoscale CMOS circuits suffer from increased gate leakage current and power consumption. In this paper, the TDDB effects on delay and power of the nanoscale CMOS circuits are analyzed using inverter chains and ISCAS85 benchmark circuits, which are designed using 45-nm CMOS predictive technology model. Finally, we discuss post-silicon adaptive tuning techniques to compensate the TDDB impact on the CMOS circuits.

Published in:

SoC Design Conference (ISOCC), 2011 International

Date of Conference:

17-18 Nov. 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.