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52-75 GHz wideband low-noise amplifier in 90 nm CMOS technology

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2 Author(s)
Sananes, R. ; Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel ; Socher, E.

A three-stage single-ended low-noise amplifier covering almost the entire V-band is presented. The design employs three cascade single-ended stages with pi-sections for wideband interstage matching and source degeneration at the first stage. The amplifier achieves a peak gain of 14 dB and minimum noise figure of 4.8 dB. A record 3 dB bandwidth of 37 is achieved with power consumption of 32 mW and core silicon area of 0.065 mm2 in 90 nm CMOS technology.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 2 )