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Modeling Inductive Behavior of MOSFET Scattering Parameter S _{22} in the Breakdown Regime

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3 Author(s)
Chie-In Lee ; Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Wei-Cheng Lin ; Yan-Tin Lin

A novel physical small-signal equivalent circuit for accurately modeling an unusual phenomenon of inductive in the breakdown regime of RF metal-oxide semiconductor field-effect transistors is presented for the first time. To remove the low-frequency dispersion of the drain-to-source resistance extracted by a conventional approach, a new extraction method of equivalent circuit element values with the introduction of an inductive network is demonstrated in this paper. Excellent agreement between simulated and experimental data is obtained up to 26.5 GHz in the breakdown region. Therefore, this proposed physical model based on the avalanche breakdown mechanism can accurately be used to predict the RF circuit performance when impact ionization occurs.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 3 )