By Topic

Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Lo, Wen-Hung ; Dept. of Phys. & the Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Chang, Ting-Chang ; Dai, Chih-Hao ; Chung, Wan-Lin
more authors

This letter investigates the impact of mechanical strain on gate-induced floating-body effect in partially depleted silicon-on-insulator p-channel metal-oxide-semiconductor field-effect transistors. The strained FB device has less NBTI degradation than unstrained devices. This behavior can be attributed to the fact that more electron accumulation induced by strain effect reduces the electric oxide field significantly during NBTI stress. Analysis of the body current under source/drain grounded and floating operation indicates an increase in the anode electron injection and electron tunneling from conduction band which occur at the partial poly-Si gate and Si substrate, respectively. This phenomenon can be attributed to the bandgap narrowing which has been induced by the strain effect.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )