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Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

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3 Author(s)
Yen-Kuang Kuo ; Department of Physics, National Changhua University of Education, Changhua 500, Taiwan ; Tsun-Hsin Wang ; Jih-Yuan Chang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3678341 

Efficiency enhancement of the blue InGaN light-emitting diodes (LEDs) with InGaN-AlGaN-InGaN barriers is studied numerically. The energy band diagrams, carrier concentrations in quantum wells, radiative recombination rate in active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results suggest that the blue InGaN/InGaN-AlGaN-InGaN LED has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams, which are caused mainly by the reduced polarization charges at the interface between the well and barrier.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 3 )

Date of Publication:

Jan 2012

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