Cart (Loading....) | Create Account
Close category search window
 

Controlled pulse-etching with xenon difluoride

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chu, P.B. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Chen, J.T. ; Yeh, R. ; Lin, G.
more authors

A gas-phase, room-temperature, plasmaless isotropic etching system has been used for bulk and thin film silicon etching. A computer controlled multi-chambered etcher is used to provide precisely metered pulses of xenon difluoride (XeF2) gas to the etch chamber. Etch rates as high as 15 microns per minute have been observed. The etch appears to have infinite selectivity to many common thin films, including silicon dioxide, silicon nitride, photoresist, and aluminum. The etch rate, profile, and roughness are reported as a function of mask aperture, etch pressure, and duration

Published in:

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on  (Volume:1 )

Date of Conference:

16-19 Jun 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.