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The resistance switching behavior has been reported in various materials, including perovskite oxides, transition metal oxides, organics, etc. Among these materials, it is interesting to investigate the RRAMs device based on high-k materials, which are appropriate to integration with CMOS process in the future. Samarium oxide (Sm2O3) is one of important rare earth oxide materials. It has been investigated as high-k materials to substitute SiO2 in CMOS device. Hence, this study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio after 104 cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 30°C.
Date of Conference: 7-9 Nov. 2011