Cart (Loading....) | Create Account
Close category search window

Comparison Between Pseudospectral and Discrete Geometric Methods for Modeling Quantization Effects in Nanoscale Electron Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Breda, D. ; Dip. di Mat. e Inf., Univ. di Udine, Udine, Italy ; Esseni, D. ; Paussa, A. ; Specogna, R.
more authors

This paper aims at comparing the pseudospectral method and discrete geometric approach for modeling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both methods, to solve a self-consistent Schrödinger-Poisson coupled problem for a 2-D electron carrier confinement according to the effective mass approximation model (suitable for FinFETs and nanowire FETs).

Published in:

Magnetics, IEEE Transactions on  (Volume:48 ,  Issue: 2 )

Date of Publication:

Feb. 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.