By Topic

Improvement of polycrystalline silicon thin-film transistors with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Shih-Chieh Wu ; Department of Electronics Engineering & Institute of Electornics, National Chiao-Tung University, Taiwan ; Tou-Hung Hou ; Shiow-Huey Chuang ; Tien-Sheng Chao
more authors

Polycrystalline silicon thin-film transistors (poly-Si TFTs) have attracted much attention because of the different applications, such as driving circuits of the active matrix liquid crystal displays (AM-LCDs) and those of the active matrix organic light emitting diode displays (AM-OLEDs) [1, 2]. Nickel-titanium oxide (NiTiO3) deposited by physical vapor deposition was introduced to be a high dielectric constant material [3]. It has been reported that NiTiO3 could be the gate dielectric of poly-Si TFTs by sol-gel spin-coating previously [4]. However, to improve the electrical performance and reliability of poly-Si TFTs, defect passivation such as hydrogen plasma treatment to create Si-H bonds is usually needed. Unfortunately, the weak Si-H bonds tend to degrade device reliability under long-term electrical operation. In this paper, high performance N-type poly-Si TFTs is demonstrated by taking advantage of the high-κ NiTiO3 gate dielectric by sol-gel spin-coating and nitrogen ion implantation technique.

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011