Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory

As the needs for high density NAND flash memory have been dramatically increasing, the memory density has also increased by scaling down the technology node. As the scaling of NAND flash memory is accelerated, the short channel effect is more severe and further scaling down is faced with process limitations. So, various types of 3D stacked NAND flash memory has been introduced and reported for ultra-high-density data storage and Fig. 1 shows one of the previously reported 3D stacked NAND flash memory structures [1-3]. However, as the distance between layers is reduced, several channel coupling problems are emerging. In this paper, we investigate the self boosting disturbance induced by channel coupling between layers in the 3D stacked NAND flash memory.