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Oxide semiconductor TFTs are of interest where low-cost, high mobility, and compatibility with flexible substrates is required. We have previously demonstrated high quality thin-film transistors (TFTs) using ZnO and Al2O3 deposited at low temperature (200°C) by weak oxidant, plasma-enhanced atomic layer deposition (PEALD) using a reactor utilizing a pump and purge mode of operation . We also reported the use of thin, weak oxidant, PEALD Al2O3 films as gate insulator for scaled III-V MOSFETs . In this work, we report TFTs fabricated using ZnO and Al2O3 deposited in a novel weak oxidant PEALD reactor using a showerhead to dispense the reactant gases and an integrated load-lock.