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We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation , which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications . Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode .
Date of Conference: 7-9 Dec. 2011