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Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

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11 Author(s)
Takayuki Watanabe ; Rsch. Inst. Electrical Commun., Tohoku University, Japan ; Stephane Boubanba Tombet ; Yudai Tanimoto ; Yuye Wang
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We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011