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A quasi-analytical model of the junctionless nanowire field-effect transistor

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4 Author(s)
Gnani, E. ; ARCES, Univ. of Bologna, Bologna, Italy ; Reggiani, S. ; Gnudi, A. ; Baccarani, G.

In this work we examine and validate a recently-published model for the junctionless (JL) nanowire FET with cylindrical geometry by carrying out extensive comparisons with TCAD simulation results over a wide range of impurity concentrations and device diameters.

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011