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Growth and characterization of nanowires and nanorods on Al2O3(110), Si(111) and SiO2/p-Si(100) by MOCVD

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7 Author(s)
Rivera, A. ; Dept. of Electr. Eng., Univ. of Connecticut, Storrs, CT, USA ; Anwar, M. ; Monville, M.R. ; Shihsheng Chang
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We report growth of ZnO nanowires and nanorods using an atmospheric pressure, horizontal MOCVD, without any metal catalyst. The ZnO structures were grown on sapphire (110), Si(111) and SiO2/p-Si(111) substrates by controlling the ZnO precursor flow, growth temperature and distance from the injector. Prior to the growth of the nanostructure, a thin film of ZnO was grown at 400°C for 2 mins, DeZ was used as ZnO precursor with a flow rate of 200 sccm, N2O was used as oxygen source with a flow rate of 50 sccm and N2 was used as the carrier gas.

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011