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High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

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6 Author(s)
Saitoh, M. ; Adv. LSI Technol. Lab., Toshiba Corp., Japan ; Ota, K. ; Tanaka, C. ; Nakabayashi, Y.
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Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated Ion improvement of short-channel NW nFETs and pFETs by adopting <;100>;-oriented NW channel instead of conventional <;110>; channel [3]. Although low-field mobility in <;100>;- and <;110>;-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher Ion in short-channel <;100>;-oriented NW Tr. than in <;110>; NW Tr. is still unclear. In order to clarify the determining factors of Ion in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011