Cart (Loading....) | Create Account
Close category search window
 

Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Cochrane, C.J. ; Pennsylvania State Univ., University Park, PA, USA ; Lenahan, P.M. ; Lelis, A.

It is well known that 4H silicon carbide (SiC) based metal oxide silicon field effect transistors (MOSFETs) have great promise in high power and high temperature applications. The reliability and performance of these MOSFETs is currently limited by the presence of SiC/SiO2 interface and near interface traps which are poorly understood. Conventional electron paramagnetic resonance (EPR) studies of silicon samples have been utilized to argue for carbon dangling bond interface traps [1]. For several years, with several coworkers, we have explored these silicon carbide based MOSFETs with electrically detected magnetic resonance (EDMR), [2,3] establishing a connection between an isotropic EDMR spectrum with g=2.003 and deep level defects in the interface/near interface region of SiC MOSFETs. We tentatively linked the spectrum to a silicon vacancy or closely related defect. This assessment was tentative because we were not previously able to quantitatively evaluate the electron nuclear hyperfine interactions at the site. Through multiple improvements in EDMR hardware and data acquisition software, we have achieved a very large improvement in sensitivity and resolution in EDMR, which allows us to detect side peak features in the EDMR spectra caused by electron nuclear hyperfine interactions. This improved resolution allows far more definitive conclusions to be drawn about defect structure. In this work, we provide extremely strong experimental evidence identifying the structure of that defect. The evidence comes from very high resolution and sensitivity “fast passage” (FP) mode [4, 5] electrically detected magnetic resonance (EDMR) or FPEDMR of the ubiquitous EDMR spectrum.

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.