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Device modeling analysis and simulation of SiC P-i-N diode under pulsed power conditions

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8 Author(s)
Ogunniyi, A. ; US Army Res. Lab., Adelphi, MD, USA ; O'Brien, H. ; Scozzie, C. ; Shaheen, W.
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Silicon carbide (SiC) material properties make it well suited for pulsed power applications. SiC has a higher electric field breakdown, allowing for thinner, more compact high voltage devices. Silicon carbide also has a much shorter minority carrier lifetime which equates to much faster recovery time; it also has good thermal conductivity equating to minimum cooling requirements for a pulsed system and a high Young's modulus enabling SiC to withstand high current and voltage pulse stresses [1].

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011