Device modeling analysis and simulation of SiC P-i-N diode under pulsed power conditions

Silicon carbide (SiC) material properties make it well suited for pulsed power applications. SiC has a higher electric field breakdown, allowing for thinner, more compact high voltage devices. Silicon carbide also has a much shorter minority carrier lifetime which equates to much faster recovery time; it also has good thermal conductivity equating to minimum cooling requirements for a pulsed system and a high Young's modulus enabling SiC to withstand high current and voltage pulse stresses [1].