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The continuous anodic oxidation technique/differential Hall effect technique is used to study damage engineering of ultralow energy doping. It has been found that the scattering defect concentrations of the beam-line (BL) implants strongly correlate to the implant ion specie atomic mass unit and energy. Plasma doping (PLAD) seems to show a different mechanism for scatter defects. PLAD processes can have an in situ B-deposited film during implant and have less direct ion bombardment on the Si surface. The low scattering defect concentrations of PLAD implants (B2H6 and BF3) indicate that PLAD implants show an intrinsic advantage over BL counterparts in the current process regime.