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Long-Term Degradation Behavior of 2.3- \mu\hbox {m} Wavelength Highly Strained InAs/InP MQW-DFB Lasers With a p-/n-InP Buried Heterostructure

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5 Author(s)
Takeshita, T. ; Nippon Telegraph & Telephone (NTT) Photonics Labs., NTT Corp., Atsugi, Japan ; Sato, T. ; Mitsuhara, M. ; Yoshimura, R.
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We investigate the long-term degradation of 2.3-μm wavelength InAs/InP highly strained multiquantum-well distributed-feedback lasers with a p- and n-type InP buried heterostructure during constant power aging. Stable operation beyond 20 000 h is confirmed at an ambient temperature of 45 °C and with a constant output power of 3 mW, and we successfully fabricate a practical optical source for trace gas monitoring applications. A conventional diffusion process dominates the main degradation mechanism as found with conventional telecommunication lasers. Furthermore, we show that some defects are located in the regrown p-type InP layer above the active layer and that downward diffused defects degrade the guide, upper separate confinement heterostructure (SCH), and active layers.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 4 )

Date of Publication:

April 2012

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