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This paper reports on the implementation of miniaturized ultra-wideband filters integrated with tunable notch filters using a silicon-based integrated passive device technology. An ultra-wideband bandpass filter is realized on a micromachined silicon substrate, showing an insertion loss of 1.1 dB, return loss of better than 15 dB, and attenuation of more than 30 dB at both lower and upper stop-bands, with a spurious-free response up to 40 GHz. The filter occupies only 2.9 mm 2.4 mm of die area. To address the in-band interference issues associated with ultra-wideband communication, very compact tunable notch filters are monolithically integrated with the bandpass filters. A two-pole tunable notch filter integrated with an ultra-wideband filter provides more than 20 dB rejection in the 5-6 GHz range to reject U-NII interferences, with a total footprint of 4.8 mm 2.9 mm. The power handling, linearity, and temperature stability of filters are characterized and presented in this paper.
Microwave Theory and Techniques, IEEE Transactions on (Volume:60 , Issue: 3 )
Date of Publication: March 2012