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A wideband 0.6dB insertion loss +20.5dBm P1dB CMOS T/R switch

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2 Author(s)
Xuesong Chen ; Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore ; Raja, M.K.

This paper provides a detailed analysis of performance limitations in RF CMOS T/R switches, and proposes a novel method to improve the insertion loss and power handling capability by dynamically biasing the body and the gate of the switch transistors to make the device operating in linear region under large signals. The concept is implemented with circuits only and no inductor is used. A prototype was designed and implemented in standard 0.18-μm CMOS technology. The experimental results show 0.6dB insertion loss at 2.4GHz, 20.5dBm P1dB for the transmitter path of the T/R Switch with a single 1.8V control voltage. The die area excluding IO pads is 0.14mm by 0.12mm. The performance meets the requirements of most mobile wireless communication systems.

Published in:

Integrated Circuits (ISIC), 2011 13th International Symposium on

Date of Conference:

12-14 Dec. 2011