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A low power S-band receiver using GaAs pHEMT technology

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4 Author(s)
Yangyang Peng ; Zhejiang-California Nanosyst. Inst., Zhejiang Univ., Hangzhou, China ; Xiaoying Wang ; Fangyue Ma ; Wenquan Sui

A two-chip S-band receiver has been designed and demonstrated in this paper. The proposed receiver is composed by a two stage low-noise amplifier (LNA) and a resistive type mixer. To achieve wide operation bandwidth as well as low noise figure, the LNA uses wideband matching network and negative feedback technique. Measured results show the LNA obtains a minimum noise figure of 2.4 dB with 17 dB gain. The input and output return loss all exceed -10 dB across the working frequency. To obtain high linearity performance, a resistive type mixer is adopted in this design. With simulation, the mixer shows a conversion loss of 7.2 dB. The isolations among RF, LO and IF ports are all greater than 20 dB. The power consumption of this receiver is 33 mW.

Published in:

Integrated Circuits (ISIC), 2011 13th International Symposium on

Date of Conference:

12-14 Dec. 2011

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