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An accelerated evaluation method for the SRAM cell write margin is proposed based on the conventional Write Noise Margin (WNM) definition. The WNM is measured under a lower word line voltage than the power supply voltage VDD. A lower word line voltage is used because the access transistor operates in the saturation mode over a wide range of threshold voltage variation. The final WNM at the VDD word line voltage, the Accelerated Write Noise Margin (AWNM), is obtained by shifting the measured WNM at the lower word line voltage. The amount of WNM shift is determined from the WNM dependence on the word line voltage. As a result, the cumulative frequency of the AWNM displays a normal distribution. A normal distribution of the AWNM drastically improves development efficiency, because the write failure probability can be estimated by a small number of samples. Effectiveness of the proposed method is verified using the Monte Carlo simulation.