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Analysis of dopant diffusion and defects in SiGe channel Quantum Well for Laser annealed device using an atomistic kinetic Monte Carlo approach

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10 Author(s)
Noda, T. ; Panasonic Corp., Nagaokakyo, Japan ; Witters, L. ; Mitard, J. ; Rosseel, E.
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An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) with Laser annealing using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011