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Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

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3 Author(s)
Gupta, S.K. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Choday, S.H. ; Roy, K.

We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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