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Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

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15 Author(s)
Taoka, N. ; Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan ; Yokoyama, M. ; Kim, S.H. ; Suzuki, R.
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We clarified that Fermi levels at InGaAs MOS interfaces are pinned inside conduction band (CB) and that this pinning severely degrades the effective mobility. Also, the energy position of the Fermi level pinning (FLP) is found to be tunable. It is experimentally shown that the increase in the difference between the FLP position and the CB minimum (CBM) leads to high mobility at high Ns region. Also, possible physical origin for this FLP is proposed.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011