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Air-stable technique for fabricating n-type carbon nanotube FETs

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5 Author(s)
Hai Wei ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Hong-Yu Chen ; Liyanage, L. ; Wong, H.-S.P.
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In this paper, we present the electrical characteristics of air-stable n-type CNFETs, fabricated using a silicon technology compatible fabrication process. Both n-type FETs and p-type FETs have been fabricated on the same wafer. With previously-published methods for scalable removal of m-CNTs, we demonstrated the complementary CNFET inverters as well as a 2-stage inverter chain using n-type CNFETs only.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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