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Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling

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11 Author(s)
Cartier, E. ; T.J. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA ; Kerber, A. ; Ando, T. ; Frank, M.M.
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Experimental reliability trends indicate that tinv-scaling with HKMG stacks remains challenging because NBTI, PBTI and TDDB reliability margins rapidly decrease with decreasing tinv values and increasing gate leakage current. A case is made that these observed trends arise from the layer structure and the materials properties of the SiO(N)/HfO2 dual dielectric. Therefore, fundamental reliability limitations appear to increasingly impact HKMG stack scaling.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011