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We have developed a device architecture for p-channel InGaAs quantum-well field-effect transistors (QW-FETs) that incorporates uniaxial strain through a self-aligned dielectric stressor. For the first time, we demonstrate substantial enhancement in the transport characteristics of p-channel InGaAs QW-FETs through the combination of compressive uniaxial strain and compressive epitaxially grown biaxial strain. Up to 36% increase of intrinsic transconductance has been observed in devices with 2 μm gate length.
Note: As originally published there was an error in this document. Due to a production error the a gap appears in first figure. A corrected PDF is now provided.
Electron Devices Meeting (IEDM), 2011 IEEE International
Date of Conference: 5-7 Dec. 2011