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Performance enhancement of p-channel InGaAs quantum-well FETs by superposition of process-induced uniaxial strain and epitaxially-grown biaxial strain

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4 Author(s)
Ling Xia ; Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, 02139, USA ; Vadim Tokranov ; Serge R Oktyabrsky ; Jesús. A. del Alamo

We have developed a device architecture for p-channel InGaAs quantum-well field-effect transistors (QW-FETs) that incorporates uniaxial strain through a self-aligned dielectric stressor. For the first time, we demonstrate substantial enhancement in the transport characteristics of p-channel InGaAs QW-FETs through the combination of compressive uniaxial strain and compressive epitaxially grown biaxial strain. Up to 36% increase of intrinsic transconductance has been observed in devices with 2 μm gate length.

Note: As originally published there was an error in this document. Due to a production error the a gap appears in first figure. A corrected PDF is now provided.  

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011