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Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering

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10 Author(s)
Kim, S.H. ; Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan ; Yokoyama, M. ; Taoka, N. ; Nakane, R.
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In this paper, we have investigated the electron transport properties under two types of mobility enhancement engineering, which are channel strain and MOS interface buffer engineering. We have demonstrated epitaxial-based biaxially strained In0.53Ga0.47As MOSFETs. Tensile strained In0.53Ga0.47As MOSFETs shows high peak mobility of 2150 cm2/Vs. Furthermore, we have demonstrated high performance InAs-OI(-on insulator) MOSFETs on Si substrate with MOS interface buffer layer by direct wafer bonding, showing high peak mobility of 3180 cm2/Vs. The scattering mechanisms for the electron mobility in thin body InxGa1-xAs(InAs)-OI MOSFETs have been systematically analyzed and identified, for the first time.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011