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Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length

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4 Author(s)
Luisier, M. ; ETH Zurich, Zürich, Switzerland ; Lundstrom, Mark ; Antoniadis, D.A. ; Bokor, J.

We use a single, multi-dimensional, and atomistic quantum transport simulator to investigate how far carbon nanotube, graphene nanoribbon, InGaAs, and Si ultra-thin body and nanowire n-type field-effect transistors can be scaled and to understand the mechanisms that limit their miniaturization. Despite multiple leakage paths, non-planar devices with a multi-gate architecture and an extremely narrow cross section can be expected to still work as good switches, even with a 5 nm gate length, provided that they exhibit a large enough band gap and transport effective mass and that their gate contact can modulate the electrostatic potential of the source and drain extensions to effectively increase the gate length.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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