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High-k stacks will be used in Flash memory cells for technology beyond sub-30 nm generations. Abnormal window shift during memory operations has been observed and was attributed to trapping/detrapping of electrons or dielectric relaxation in the high-k layer. In this work, the cause of abnormal VTH/VFB shift at low operating electric fields is investigated. For the first time, extensive experimental evidences show that this shift is caused by as-grown mobile charges in Al2O3 layers. Its impacts on program/erase windows and read/pass disturbance in Flash memory cells are evaluated.
Electron Devices Meeting (IEDM), 2011 IEEE International
Date of Conference: 5-7 Dec. 2011