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Extremely-low-noise CMOS Image Sensor with high saturation capacity

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22 Author(s)
Itonaga, K. ; Semicond. Technol. Dev. Div., Sony Corp., Tokyo, Japan ; Mizuta, K. ; Kataoka, T. ; Yanagita, M.
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We have developed a flat device structure, which we call “FLAT”, with no isolation grooves/ridges and no Si substrate etching in the imaging area of the CMOS Image Sensor (CIS). We employed this FLAT structure to achieve a 1.12 μm pitch pixel CIS with a 1.25 transistor/pixel architecture and excellent image quality. It uses FLAT transistors(Trs) that generate greatly-reduced 1/f noise, and FLAT isolators (Isos) that increase the saturation capacity (Qs) due to increasing both effective photodiode (PD) area and PD potential under low dark current.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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