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Spatial variation of TSV capacitance and method of stabilization with Al2O3-induced negative fixed charge at the silicon-liner interface

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7 Author(s)
Zhang, L. ; Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore ; Made, R.I. ; Li, H.Y. ; Gao, S.
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Stable TSV capacitance is desired to control spatial TSV performance variation due to non-uniform hot-spot heating. Thin Al2O3 is inserted between PETEOS liner and Si substrate to induce negative fixed charge (Qf = -7.44 × 1011cm-2). This causes flat-band voltage shift (ΔVFB = +7.37 V) and the TSV is operated in the stable accumulation region within the operating voltage of interest (0-5 V). The leakage current density of this combination is reduced by 10 X with annealing in forming gas at 300°C.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011