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Stable TSV capacitance is desired to control spatial TSV performance variation due to non-uniform hot-spot heating. Thin Al2O3 is inserted between PETEOS liner and Si substrate to induce negative fixed charge (Qf = -7.44 × 1011cm-2). This causes flat-band voltage shift (ΔVFB = +7.37 V) and the TSV is operated in the stable accumulation region within the operating voltage of interest (0-5 V). The leakage current density of this combination is reduced by 10 X with annealing in forming gas at 300°C.