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3D copper TSV integration, testing and reliability

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19 Author(s)
Farooq, M.G. ; Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA ; Graves-Abe, T.L. ; Landers, W.F. ; Kothandaraman, C.
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Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proximity.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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