Cart (Loading....) | Create Account
Close category search window
 

Investigation of stress induced voiding and electromigration phenomena on direct copper bonding interconnects for 3D integration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Taibi, R. ; STMicroelectron., Crolles, France ; Di Cioccio, L. ; Chappaz, C. ; Francou, M.
more authors

We investigate for the first time the reliability of the direct copper bonding process. Electromigration (EM) and Stress Induced Voiding (SIV) tests are performed on intensive 30000 daisy chains and emphasize the good behaviour facing the risk of reliability issues in Cu/Cu bonded interconnects achieved by a direct low temperature (200°C) bonding. Furthermore, a comparison between stand alone and bonded device shows that the metallic bonding interfaces do not impact on the failure mechanism during EM tests.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.