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Device circuit co-design using classical and non-classical III–V Multi-Gate Quantum-Well FETs (MuQFETs)

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4 Author(s)
Lu Liu ; Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA ; Saripalli, V. ; Narayanan, V. ; Datta, S.

This paper presents ultra low-power reconfigurable logic and single-electron memory architecture to enable sub-300 mV VCC operation using classical and non-classical (NC) III-V Multi-Gate Quantum Well Field Effect Transistors (MuQFETs). A strained In0.7Ga0.3As quantum-well based classical multi-gate FET and an In0.7Ga0.3As MuQFET operating in Coulomb-blockade mode with tunable tunnel barrier are experimentally demonstrated. Reconfigurable Binary Decision Diagram (BDD) logic and single-electron SRAM implementations based on III-V MuQFETs are demonstrated. Using device models well calibrated to experiments, we show 50% reduction in minimum-energy for logic, and 75× reduction in dynamic power for memory at equivalent performance over Si CMOS logic.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011