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Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond

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38 Author(s)
S. H. Lee ; Advanced Device & PI Team, R & D Division, Hynix Semiconductor Inc., Bubal-eub, Icheon-si, GyeungGi-do 467-701, KOREA ; H. C. Park ; M. S. Kim ; H. W. Kim
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We successfully developed highly scalable and cost-effective PCRAM technology based on 0.007um2 (4F2, 84nm pitch) sized novel cell scheme. The chip size and density are 33.207mm2 and 1Gb. The device functionality and reliability were clearly demonstrated through fully integrated chip, which showed a promising feasibility for productive NVM applications.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011