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PRAM cell technology and characterization in 20nm node size

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13 Author(s)
Kang, M.J. ; New Memory Lab., Samsung Electron. Co. Ltd., Hwasung, South Korea ; Park, T.J. ; Kwon, Y.W. ; Ahn, D.H.
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We reported characteristics of 20nm PRAM cell. Optimization of diode integration process and improved implantation technology were used to satisfy the required diode on-current (Ion) with low off-current (Ioff). Confined cell structure and novel bottom electrode (BE) materials were developed to reduce a reset current (Ireset) below 100uA. Using the advanced technologies, we successfully produced fully integrated 20nm node size PRAM device for the first time.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011