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Simulation of Total Ionising Dose on LDMOS devices for High Energy Physics applications

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7 Author(s)
P. Fernández-Martínez ; Instituto de Microelectrónica de Barcelona (IMB-CNM-CSIC), Campus UAB, 08193 Bellaterra, Spain ; F. R. Palomo ; S. Díez ; S. Hidalgo
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The investigation of the Total Ionising Dose (TID) impact on the electrical characteristics of Lateral Diffused MOS transistors (LDMOS) requires the performance of a large number of complex and costly irradiation experiments. The development of a suitable simulation procedure would be of major interest in order to reduce the effort in time and cost. This paper describes a simulation methodology for the emulation of TID effects based on a physics-based code. The obtained simulation results are validated by comparing with available experimental data which are also used to tune the simulation fitting parameters.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Date of Conference:

19-23 Sept. 2011