Referenced Items are not available for this document.
The ESA SEU-Monitor, a DDR2 SDRAM and a power MOSFET have been irradiated at GSI with ions of energies from 80 to 1500 MeV/n. The results are compared to low energy (<; 50 MeV/n) data.
Published in:
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Date of Conference: 19-23 Sept. 2011
- Page(s):
- 711 - 715
- ISSN :
- 0379-6566
- Print ISBN:
- 978-1-4577-0585-4
- INSPEC Accession Number:
- 12591619
- Conference Location :
- Sevilla
- Digital Object Identifier :
- 10.1109/RADECS.2011.6131368
- Product Type:
- Conference Publications
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