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A compact model for Single Event Effects in PD SOI sub-micron MOSFETs

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4 Author(s)
J. Alvarado ; Depto. de Ingeniería en Telecomunicaciones, Universidad Nacional Autónoma de México, Cd. Universitaria, Coyoacan, Ciudad de México, México ; V. Kilchytska ; E. Boufouss ; D. Flandre

This paper presents a compact model implemented in Verilog-A for PD SOI sub-micron MOSFETs, which allows for describing the Single Events Effects (SEE) produced by heavy ions. This Verilog-A module can be coupled with Spice simulator in order to have faster (time-efficient) circuit simulations with good agreement. Due to the physical aspects considered in the model, better flexibility than the standard current source method is achieved. Experimental data for 0.15 and 0.13 μm technology nodes are used to validate our model. Robustness of the model to reproduce experimental results is demonstrated on three datasets available in literature: 1) single event transient current in stand-alone n-FET from 0.13μm PD SOI process hinted by heavy ions at different positions; 2) SEE propagation in path delay with ten inverters realized in 0.13μm PD SOI process; 3) 6T SRAMs with active element delay on SEE-rad-hardened 0.15μm PD SOI process.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Date of Conference:

19-23 Sept. 2011