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SEU induced dynamic current variation of SRAM-based FPGA: A case study

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5 Author(s)
Xing Kefei ; Sch. of Mechatron. & Autom., Nat. Univ. of Defense Technol., Changsha, China ; Yang Jun ; Wang Yueke ; Hou Mingdong
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The dynamic current variation property of XC2V1000, a kind of SRAM-based Field Programmable Gate Arrays(FPGA), is presented by heavy ion irradiation. The relationship between dynamic current and the quantity of SEUs (Single Event Upsets) in configuration memory of FPGA is derived from the experimental data, and probable causation of the phenomenon is analyzed with the help of irradiation and fault injection experiment. The current increases gradually in several discrete steps and is probably due to routing resources confliction resulting from SEUs of configuration memory. In general, current increases when more SEUs occur, but it may also drops in some cases. And such increase will return to normal value when the FPGA is reconfigured.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Date of Conference:

19-23 Sept. 2011