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MBU characterization of NAND-Flash memories under heavy-ion irradiation

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6 Author(s)
Grurmann, K. ; IDA, Tech. Univ. of Braunschweig, Braunschweig, Germany ; Walter, D. ; Herrmann, M. ; Gliem, F.
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The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBU-pattern has been measured.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Date of Conference:

19-23 Sept. 2011