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The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential ( ψs) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (Not) and the interface trap (Nit) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψs. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.